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HA17301P
Quad Operational Amplifier
Description
The HA17301P is an internal-compensation quad operational amplifier that operates on a single-voltage power supply. Typical applications for the HA17301P include waveform generators, voltage regulators, logic circuits, and voltage-controlled oscillators.
Features
* * * * Wide operating temperature range Single-voltage power supply operation Internal phase compensation Low input bias current
Pin Arrangement
Vin(+)2 Vin(+)1 Vin(-)1 Vout1 Vout2 Vin(-)2 GND
1 2 3 4 5 6
- - +
14 VCC 13 Vin(+)3 1
+ -
12 Vin(+)4 11 Vin(-)4 10 Vout4
4
2
+ +
3
9 Vout3
-
7
8 Vin(-)3
(Top view)
HA17301P
Circuit Structure (1/4)
VCC
Vout Vin(-) Vin(+) GND
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HA17301P
Absolute Maximum Ratings (Ta = 25C)
Item Power-supply voltage Noninverting input current Sink current Source current Allowable power dissipation* Operating temperature Storage temperature Symbol VCC Ir Io sink Io source PT Topr Tstg Ratings 28 5 50 50 625 -20 to +75 -55 to +125 Unit V mA mA mA mW C C
Note: This is the allowable value up to Ta = 50C for the HA17301P. Derate by 8.3 mW/C above that temperature.
Electrical Characteristics (VCC = +15 V, RL = 5.0 k, Ta = 25C)
Item Voltage gain Supply current Symbol AVD I CO I CG Input bias current Current mirror gain Output source current I IB AI Io source Min 1,000 -- -- -- 0.80 3 -- Output sink current Output voltage Io sink VOH VOL(inv) VOL(non) Input resistance Slew rate Bandwidth Phase margin Power-supply rejection ratio Channel separation Rin SR BW m PSRR CS 0.5 13.5 -- -- 0.1 -- -- -- -- -- Typ 1,400 7.7 8.3 80 0.94 13 10 0.75 13.9 0.04 0.55 1.0 0.2 2.6 87 63 63 Max -- 10 14 300 1.16 -- -- -- -- 0.1 -- -- -- -- -- -- -- Unit V/V mA mA nA A/A mA mA mA V V V M V/s MHz deg dB dB f = 100 Hz f = 1.0 kHz Inverting input driven Non inverting input driven Inverting input only CL = 100 pF, RL = 5.0 k AVD = 1 Non inverting input open Non inverting input grounded RL = Ir = 200 A VOH = 0.4 V VOH = 9.0 V VOL = 0.4 V Test Conditions
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HA17301P
HA17301P Application Examples
The HA17301P is a quad operational amplifier, and consists of four operational amplifier circuits and one bias current circuit. The HA17301P features a wide operating temperature range, single-voltage power supply operation, internal phase compensation, a wide zero-cross bandwidth, a low input bias current, and a high open-loop gain. Thus the HA17301P can be used in a wide range of applications. This section describes several applications using the HA17301P. HA17301 Circuit Operation
VCC Q5 C1 3 pF Inverting input 3 Non inverting input 2 D1 GND Bias circuit Q3 Q10 Op amp 1 Q1 Q2 Q4 4 Output
Figure 1 HA17301 Internal Equivalent Circuit Figure 1 shows the internal equivalent circuit for the HA17301P bias circuit and one operational amplifier circuit (Op amp 1). Op amp 1 is basically an emitter ground type operational amplifier in which the input transistor Q1, the buffer transistor Q 4, the current source transistor Q5, the output emitter-follower transistor Q2, and the current source transistor Q10 form an inverting amplifier. The voltage gain of this circuit is all given by the transistor Q1, and the adoption of the current-supply load Q5 allows this circuit to provide a large open-loop gain even at low power-supply voltages. Next, the emitter-follower transistor Q 2 lowers the output impedance of this circuit. The use of the power-supply transistor Q10 as the load for Q2 gives this circuit an extremely large dynamic range, and essentially an amplitude from ground to (VCC - 1) can be acquired. Also, the buffer transistor Q4 is used to reduce the input current without increasing the DC input voltage level. Since the capacitor C1 is used to preserve stability when this inverting amplifier is used as a closed circuit, no external compensation is required. Now consider the non inverting circuit. Assuming that the current amplification ratio provided by Q 3 is adequately large for the current flowing into the non inverting input, then all that current will flow through diode D 1 and the voltage drop induced in the diode D 1 by this input current will be applied to the Q 3 baseemitter junction. Therefore, if D 1 and Q 3 are matched, a current equal to the input current will flow in the Q3 emitter. Assuming that the current amplification ratio provided by Q3 is adequately large, a current equal to the input current will flow in the Q 3 collector. This is called a "current mirror", and when an external feedback resistor is used, a current equal to the non inverting input current will flow in this resistor and thus determine the output voltage.
4
HA17301P
Inverting Amplifier There are three bias techniques for biasing the inverting amplifier, the single power supply bias technique, the NVBE bias technique, and the load voltage bias technique. 1. Single Power Supply Bias Technique Figure 2 shows a common AC amplifier that is biased by the same power supply as the supply that operates the amplifier.
R2 Cin 0.1 F Vin R1 50 k I R3 = 2R2
+
500 k VD VD
-
- Vout +
+
1 M V
+
Figure 2 Single Power Supply Bias Technique
R Vout =- 2 Vin R1
(1)
2. NVBE Bias Technique
R2 Cin R1 VRE 82 k 1 M - Vout + I
-
0.1 F 100 k I Vin R3
Figure 3 NVBE Bias Technique This is the most useful application of an inverting AC amplifier. In this circuit, the input bias voltage VBE for the inverting input is determined by the current that flows to ground through the resistor R3.
R Vout =- 2 Vin R1 (2)
5
HA17301P
Triangular Wave oscillator Triangular waveforms are usually acquired by integrating an alternating positive and negative DC voltage. Figure 4 shows the relation between the input and output in this circuit.
C1 R1 1 M VRE 0.001 F - Vout1 + R3 I
-
V
+
100 k - Vout2 + R5 120 k
R2
500 k I V
+ +
R4 1 M
Figure 4 Triangular Wave Oscillator
V02
VOH
I I+ TOL VOL t-n TOH
Figure 5 Triangular Wave Generator Operation
TOL = C1 R1 R3 VOH R5 (V+ - VBE) C1 R3 V+ VOH V+ - VBE - R2 R1
(3)
TOH = R5
(4)
Here, if R1 = 2*R2, VOH = V+, and V+ > VBE , then:
TOH + TOL = 2C1 R1 R3 R5
(5)
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HA17301P
Vout1 0 Vout2 0 Vertical: Horizontal: 5 V/cm 0.5 ms/cm
Figure 6 Triangular Wave Generator Operating Waveform Table 1
Test Item Triangular wave generator TOH TOL VOIH VOIL Tested Value 1.06 0.82 13.5 1.5 Calculated Value 0.83 0.83 14 1.5 Unit ms ms V V Test Condition VCC = 15 V, V+ = 15 V, C1 = 0.001 F, R1 = 1 M, R2 = 500 k, R3 = 100 k, R4 = 1 M, R5 = 120 k Figure 4
Comparators This section describes three comparator circuits implemented using the HA17301P, a positive input voltage comparator, a negative input voltage comparator, and a power voltage comparator. 1. Positive Input Voltage Comparator
I- +Vin 1 M I+ +VREF 1 M + Vout -
Figure 7 Positive Input Voltage Comparator Vout in the circuit shown in figure 7 will be V OH when I- < I+ and VOL when I- > I+. To assure that this circuit operates correctly, the reference voltage must be greater than VBE .
7
HA17301P
28 VCC = 28 V
Output voltage Vout (V)
24 20 16 12 10 8 4 0 5 3 1 2 3 4 5 6 7 8 9 VREF = 5 V 20
15
Input voltage Vin (V)
Figure 8 Positive Input Voltage Comparator Operating Characteristics (1)
24
Output voltage Vout (V)
20 V+ = 15 V 16 12
VREF = 0.5 V
1.0 2.0
5.0
10
8 4
0
2
4
6
8
10
12
14
15 16
18
Input voltage Vin (V)
Figure 9 Positive Input Voltage Comparator Operating Characteristics (2) 2. Negative Input Voltage Comparator
V+
R3 200 k Vin R1 100 k VREF R2 I-
R4 200 k - Vout +
100 k
I+
Figure 10 Negative Input Voltage Comparator
8
HA17301P
VIN > R1 VBE 1 1 + R1 R4 - V+ R4 (6)
If resistor R4 is chosen so that formula 6 holds, and
VREF > R2 VBE 1 1 + R2 R3 - V+ R3 (7)
if resistor R4 is chosen so that formula 7 holds, then even if VIN and VREF are negative, Vout will be VOH when I- < I+ and VOL when I- > I+, as was the case for the positive input voltage comparator.
28 24 V+ = +28 V
Output volatge Vout (V)
20 +20 16 12 8 4 0 -6 VREF = -1 V +5 +3 -2 +15
+10
-5
-4
-3
-1
0
Input volatge Vin (V)
Figure 11 Negative Input Voltage Comparator Operating Characteristics (1)
24
Output voltage Vout (V)
20 V- = +15 V 16
12 VREF = -15 V
8
-2
4
0 -6
-5
-4
-3
-2
-1
-1 0
Input voltage Vin (V)
Figure 12 Negative Input Voltage Comparator Operating Characteristics (2)
9
HA17301P
3. Power Comparator As shown in figure 13, adding an external transistor allows the circuit to drive loads that require a larger current than the output current that the HA17301P can supply.
V+ 12ESB 40 mA LAMP VREF 1 M Vin 1 M + 5.1 k - 15 2SC458 K
Figure 13 Power Comparator
24
Output voltage Vout (V)
20 16 12 VREF = -1 V 2 5 10 8 4 15 12 14 16
0
2
4
6
8
10
18
Input voltage Vin (V)
Figure 14 Power Comparator Operating Characteristics
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HA17301P
Characteristic Curves
Input Bias Current vs. Ambient Temperature
140 VCC = 15 V 120 100 80 60 40 20 0 -40 14 12 Ta = 25C Vin(+) = Open
Supply current vs. Power-Supply Voltage (1)
Input bias current IIB (nA)
Supply current ICO (mA)
-20 0 20 40 60 80 100
10 8 6 4 2
0
4
8
12
16
20
24
28
Ambient temperature Ta (C)
Power-supply voltage VCC (V)
Supply current vs. Power-Supply Voltage (2)
14 1.00 Ta = 25C Vin(+) = Grounded
Current Mirror Gain vs Ambient Temperature
VCC = 15 V
10 8 6 4 2
Current mirror gain AI (A/A)
12
Supply current ICG (mA)
0.95
0.90
0
4
8
12
16
20
24
28
0 -40
-20
0
20
40
60
80
100
Power-supply voltage VCC (V)
Ambient temperature Ta (C)
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HA17301P
Output Source Current vs. Power-Supply Voltage
28 1.4
Output Sink Current vs. Power-Supply Voltage
Ta = 25C VOL = 0.4 Vdc
Output source current Io source (mA)
Output sink current Io sink (mA)
24 20 16 12 8 4
Ta = 25C VOH = 0.4 Vdc
1.2 1.0 0.8 0.6 0.4 0.2
0
4
8
12
16
20
24
28
0
4
8
12
16
20
24
28
Power-supply voltage VCC (V)
Power-supply voltage VCC (V)
Voltage Gain vs. Frequency
80 70 VCC = 15 V Ta = 25C Vin = 1 mV 74 72
Voltage Gain vs. Ambient Temperature
VCC = 15 V f = 1 kHz
Voltage gain AVD (dB)
Voltage gain AVD (dB)
60 50 40 30 20 0 0.1 k
70 68 66 64 62 60 -40
1k
10 k
100 k
1M
10 M
-20
0
20
40
60
80
100
Frequency f (Hz)
Ambient temperature Ta (C)
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HA17301P
Package Dimensions
Unit: mm
19.20 20.32 Max 14 8 6.30 7.40 Max 1
2.39 Max
1.30
7 7.62
0.51 Min
2.54 Min 5.06 Max
2.54 0.25
0.48 0.10
0.25 - 0.05 0 - 15
+ 0.10
Hitachi Code JEDEC EIAJ Mass (reference value)
DP-14 Conforms Conforms 0.97 g
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HA17301P
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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